features ? electrically programmable analog device cmos technology ? operates from 2v, 3v, 5v to 10v ? flexible basic circuit building block and design element ? very high resolution -- average e-trim voltage resolution of 0.1mv ? wide dynamic range -- current levels from 0.1 m a to 3000 m a ? voltage adjustment range from 1.000v to 3.000v in 0.1mv steps ? proven, non-volatile cmos technology ? typical 10 years drift of less than 2mv ? usable in voltage mode or current mode ? high input impedance -- 10 12 w ? very high dc current gain -- greater than 10 9 ? device operating current has positive temperature coefficient range and negative temperature coefficient range with cross-over zero temperature coefficient current level at 68 m a ? tight matching and tracking of on-resistance between different devices with e-trim ? wide dynamic resistance matching range ? very low input currents and leakage currents ? low cost, monolithic technology ? application-specific or in-system programming modes ? optional user software-controlled automation ? optional e-trim of any standard/custom configuration ? micropower operation ? available in standard pdip, soic and hermetic cdip packages ? suitable for matched-pair balanced circuit configuration ? suitable for both coarse and fine trimming as well as matched mosfet array applications quad/dual epad ? precision matched pair n-channel mosfet array a dvanced l inear d evices, i nc. ald1123e/ALD1121E benefits ? precision matched electrically after packaging ? simple, elegant single-chip user option to trimming voltage/current values ? excellent device matching characteristics with or without additional electrical trim ? remotely and electrically trim parameters on circuits that are physically inaccessible ? usable in environmentally sealed circuits ? no mechanical moving parts -- high g-shock tolerance ? improved reliability, dependability, dust and moisture resistance ? cost and labor savings ? small footprint for high board density applications pin configuration pin configuration operating temperature range* 0 c to +70 c0 c to +70 c 8-pin 8-pin plastic dip soic package package ALD1121E pa ALD1121E sa operating temperature range* 0 c to +70 c0 c to +70 c 16-pin 16-pin plastic dip soic package package ald1123e pc ald1123e sc ordering information * contact factory for industrial temperature range ? 2003 advanced linear devices, inc. 415 tasman drive, sunnyvale, california 94089 -1706 tel: (408) 747-1155 fax: (408) 747-1286 www.aldinc.com 1 2 3 6 7 8 4 5 g n1 d n1 s n2 d n2 da, pa, sa package ALD1121E s n1, v - g n2 p n2 p n1 m 1 m 2 s n2 1 2 3 14 15 16 4 13 5 12 p n3 6 7 8 10 11 g n1 d n1 p n1 g n4 v - 2, s n4 d n4 9 g n3 d n3 g n2 d n2 dc, pc, sc package p n2 s n3 v - 1, s n1 p n4 ald1123e m 1 m 2 m 4 m 3
ald1123e/ALD1121E advanced linear devices 2 general description ald1123e/ALD1121E are monolithic quad/dual epad ? (electrically program- mable analog device) n-channel mosfets with electrically adjustable threshold (turn-on) voltage. the ald1123e/ALD1121E are precision matched and adjusted (e-trimmed) at the factory resulting in quad/dual mosfets that are highly matched in electrical characteristics. the ald1123e has four (4) separate source pins. sn1, sn2 share a common substrate pin v-1 which has to be connected to the most negative voltage potential. likewise, sn3, sn4 share a common substrate pin v-2 which has to be connected to the negative voltage potential for sn3, sn4. the ALD1121E has two (2) separate source pins (sn1, sn2). both sn1, sn2 share a common substrate pin 4 which has to be connected to the most negative voltage potential. using an ald1123e/ALD1121E mosfet array is simple and straight forward. the mosfets function in electrical characteristics as n-channel mosfets except that all the devices have exceptional matching to each other. for a given input voltage, the threshold voltage of a mosfet device determines its drain on-current, resulting in an on-resistance characteristic that can be precisely preset and then controlled by the input voltage very accurately. since these devices are on the same monolithic chip, they also exhibit excellent tempco matching characteristics. these mosfet devices have very low input currents, and as a result a very high input impedance (>10 12 ohm). the gate voltage from a control source can drive many mosfet inputs with practically no loading effects. used in precision current mirror or current multiplier applications, they can be used to provide a current source over a 100 na to 3 ma range, and with either a positive, negative or zero tempco. optional epad threshold voltage trimming by user the basic epad mosfet device is a monotonically adjustable device which means the device can normally be e-trimmed to increase in threshold voltage and to decrease in drain-on current as a function of a given input bias voltage. used as an in-circuit element for trimming or setting a combination of voltage and/or current characteristics, it can be e-trimmed remotely and automatically. once e-trimmed, the set voltage and current levels are stored indefinitely inside the device as a nonvolatile stored charge, which is not affected during normal operation of the device, even when power is turned off. a given epad device can be adjusted many times to continually increase its threshold voltage. a pair of epad devices can also be connected differentially such that one device is used to adjust a parameter in one direction and the other device is used to adjust the same parameter in the other direction. the ald1123e/ALD1121E can be e-trimmed with the ald epad programmer to obtain the desired voltage and current levels. or they can be e-trimmed as an active in-system element in a user system, via user designed interface circuitry. pn1, pn2, etc., are pins required for optional e-trim of respective mosfet devices. if unused, these pins are to be connected to v- or ground. for more information, see application note an1108. applications ? precision pc-based electronic calibration ? automated voltage trimming or setting ? remote voltage or current adjustment of inaccessible nodes ? pcmcia based instrumentation trimming ? electrically adjusted resistive load ? temperature compensated current sources and current mirrors ? electrically trimmed/calibrated current sources ? permanent precision preset voltage level shifter ? low temperature coefficient voltage and/or current bias circuits ? multiple preset voltage bias circuits ? multiple channel resistor pull-up or pull-down circuits ? microprocessor based process control systems ? portable data acquisition systems ? battery operated terminals and instruments ? remote telemetry systems ? e-trim gain amplifiers ? low level signal conditioning ? sensor and transducer bias currents ? neural networks block diagram block diagram ALD1121E ald1123e p n1 (1) d n1 (3) g n1 (2) d n2 (7) p n2 (5) g n2 (6 ) s n2 (8) m 1 m 2 s n1 (4) v - (4) ~ m 1 m 2 m 3 m 4
p n4 (5) p n1 (1) d n1 (3) g n1 (2) d n2 (15) p n2 (13) g n2 (14) p n3 (9) d n3 (11) g n3 (10) d n4 (7) g n4 (6) s n1 (4) s n2 (16) s n3 (12) s n4 (8) v - 2 (8) ~ v - 1 (4) ~
ald1123e/ALD1121E advanced linear devices 3 drain to source voltage 1 v ds 10.0 10.0 v initial threshold voltage 2 v ti 0.990 1.000 1.010 0.990 1.000 1.010 v i ds = 1 m a t a = 21 c e-trim vt range v t 1.000 3.000 1.000 3.000 v drain - gate connected tcv ds -1.6 -1.6 mv/ ci d = 5 m a voltage tempco -0.3 -0.3 mv/ ci d = 50 m a 0.0 0.0 mv/ ci d = 68 m a +2.7 +2.7 mv/ ci d = 500 m a initial offset voltage 3 v os i 15 15mv tempco of v os tcv os 55 m v/ cv ds1 = v ds2 differential threshold voltage 4 dv t 2.000 2.000 v tempco of differential threshold voltage 4 tcdv t 0.033 0.033 mv/ c long term drift d v t / d t -0.02 -0.05 -0.02 -0.05 mv 1000 hours long term drift match d v t / d t-5 -5 m v 1000 hours drain source on current i ds(on) 3.0 3.0 ma v g =v d = 5v v s = 0v v t = 1.0 drain source on current 4 i ds(on) 0.8 0.8 ma v g =v d = 5v v s = 0v v t = 3.0 initial zero tempco voltage 3 v ztci 1.52 1.52 v v t = 1.000v zero tempco current i ztc 68 68 m a initial on-resistance 3 r on i 500 500 w v gs ?= 5v v ds = 0.1v on-resistance match d r on 0.5 0.5 % absolute maximum ratings supply voltage, v + referenced to v - -0.3v to +13.2v supply voltage, v s referenced to v - 6.6v differential input voltage range 0.3v to v + +0.3v power dissipation 600 mw operating temperature range pa, sa, pc, sc package 0 c to +70 c da, dc package -55 c to +125 c storage temperature range -65 c to +150 c lead temperature, 10 seconds +260 c operating electrical characteristics t a = 25 c v + = +5.0v unless otherwise specified ald1123e ALD1121E test parameter symbol min typ max min typ max unit conditions notes: 1. v+ must be the most positive supply rail and v- must be at the most negative supply rail. source terminals other than those labeled as v- can be at any voltage between v- and v+. 2. initial threshold voltage is set at the factory. if no epad vt trimming is intended by user, then this is also the final or permanent threshold voltage value. 3. initial and final values are the same unless deliberately changed by user. 4. these parameters apply only when vt of one or more of the devices are to be changed by user.
ald1123e/ALD1121E advanced linear devices 4 e-trim characteristics t a = 25 c v + = +5.0v unless otherwise specified ald1123e ALD1121E test parameter symbol min typ max min typ max unit conditions e-trim v t range 4 v t 1.000 3.000 1.000 3.000 v resolution of v t e-trim pulse step 4 rv t 0.1 1 0.1 1 mv change in v t per d v t / n 0.5 0.5 mv/ pulse v t = 1.0v e-trim pulse 4 0.05 0.05 v t = 2.5v e-trim pulse voltage 4 vp 11.75 12.00 12.25 11.75 12.00 12.25 v e-trim pulse current 4 ip 2 2 ma pulse frequency 4 ? pulse 50 50 kh z transconductance gm 1.4 1.4 ma/v v d = 10v,v g =v t + 4.0 transconductance match d gm 25 25 m a/v v d = 10v,v g =v t + 4.0 low level output conductance g ol 66 m a/v v g = v t +0.5v high level output conductance g oh 68 68 m a/v v g = v t +4.0v drain off leakage current i d(off) 5 400 5 400 pa 44nat a = 125 c gate leakage current i gss 10 100 10 100 pa 11nat a = 125 c input capacitance c iss 25 25 pf cross talk 60 60 db f = 100khz relaxation time constant 4 t rlx 2 2 hours relaxation voltage 4 v rlx -0.3 -0.3 % 1.0v v t 3.0v operating electrical characteristics (cont'd) t a = 25 c v + = +5.0v unless otherwise specified ald1123e ALD1121E test parameter symbol min typ max min typ max unit conditions
ald1123e/ALD1121E advanced linear devices 5 typical performance characteristics output characteristics drain source on voltage (v) 02 46 1012 8 20 15 10 5 0 drain source on current (ma) t a = +25 c v gs = +12v v gs = + 2v v gs = + 4v v gs = + 6v v gs = + 8v v gs = +10v output characteristics -200 -160 -120 -80 -40 +200 +1.0 0 0 40 80 120 160 drain source voltage (mv) drain source on current (ma) -1.0 v gs = +12v v gs = +6v v gs = +8v v gs = +10v t a = +25 c transconductance vs. threshold voltage threshold voltage (v) 0 0.5 1.0 1.5 2.0 3.0 3.5 2.5 2.0 1.5 1.0 5.0 transconductance ( ma/v) t a = +25 c 0 v gs = v t + 4.0v v ds = 10v high level output conductance vs.threshold voltage threshold voltage (v) 0 0.5 1.0 1.5 2.0 3.0 3.5 2.5 75 70 60 50 high level output conductance ( a/v) t a = +25 c v gs = v t + 4.0v v ds = 5.0v drain source on current vs. threshold voltage threshold voltage (v) 0 0.5 1.0 1.5 2.0 3.0 3.5 2.5 t a = +25 c v ds = +5.0v drain source on current (ma) 3.0 2.0 1.0 0 v gs = +5v v gs = +1v v gs = +2v v gs = +3v v gs = +4v drain source on current vs. ambient temperature 6 5 4 3 2 1 0 ambient temperature ( c) -50 -25 0 25 50 75 100 125 drain source on current (ma) v g = 5v v t = 1.0v v t = 1.5v v t = 3.0v v t = 2.0v v t = 2.5v
ald1123e/ALD1121E advanced linear devices 6 typical performance characteristics low level output conductance vs. ambient temperature 12 10 8 6 4 2 low level output conductance( a/v) ambient temperature ( c) -50 -25 0 25 50 125 100 75 v gs = v t + 0.5v v ds = 5.0v high level output conductance vs. ambient temperature 100 80 70 high level output conductance (ma/v) -50 -25 0 25 50 125 100 75 ambient temperature ( c) 90 60 40 50 v gs = v t + 4.0v v ds = 5.0v low level output conductance vs. threshold voltage threshold votage (v) 10 5 0 low level current output conductance ( a/v) 0.5 1.0 1.5 2.0 3.0 3.5 2.5 0 t a = +25 c v gs = v t + 0.5v v ds = 5.0v transconductance vs. ambient temperature transconductance (ma/v) ambient temperature ( c) -50 -25 0 25 50 125 100 75 2.5 2.0 1.5 1.0 0 0.5 threshold voltage vs. ambient temperature 4.0 3.0 2.0 0 threshold votage (v) ambient temperature ( c) -50 -25 0 25 50 125 100 75 1.0 v ds = v gs i d = 1.0 a v t = 1.0v v t = 1.5v v t = 2.0v v t = 2.5v v t = 3.0v drain off leakage current i ds vs. ambient temperature ambient temperature ( c) -50 -25 0 25 50 125 100 75 500 400 drain off leakage current (pa) 300 200 600 100 0 i ds
ald1123e/ALD1121E advanced linear devices 7 typical performance characteristics change in differential threshold voltage vs. ambient temperature +10 +8 +6 +4 +2 -2 0 -10 change in differential thresholdvoltage (mv) -50 -25 0 25 50 125 100 75 ambient temperature ( c) -8 -6 -4 representative units gate source voltage vs. drain source on current drain source on current ( a) 5 4 3 2 1 0 gate source voltage (v) 0.1 1 100 10 1000 10000 v ds = 0.5v t a = +125 c v ds = 0.5v t a = +25 c v ds = 5v t a = +25 c v ds = 5v t a = +125 c v ds i ds(on) d v gs s v ds = r on ?i ds(on) drain source on current, bias current vs. ambient temperature gate and drain source voltage (vgs = vds) (v) 5 4 3 2 1 0 drain source on current (ma) 5 4 3 2 1 0 70 c 125 c -25 c 0 c -55 c drain source on current, bias current vs. ambient temperature gate and drain source voltage (vgs = vds) (v) 100 50 0 1.8 1.0 1.2 2.0 1.6 1.4 drain source on current ( a) zero temperature coefficient (ztc) { { { v t = 1.2v v t = 1.4v v t = 1.0v - 25 c - 25 c - 25 c ztc 125 c 125 c ztc 125 c drain source on current vs. output voltage 5 4 3 2 1 0 5 4 3 2 1 0 t a = -55 c t a = +50 c drain source on current (ma) output voltage (v) t a = 0 c v t = 1.000v v ds = v gs t a = +125 c drain source on current, bias current vs. on - resistance on - resistance (k ) 0.1 1.0 100 10 1000 10000 drain source on current, bias current ( a) 0.1 1.0 100 10 1000 10000 v ds = r on ?i ds(on) v gs = +0.9v to +5.0v v ds = 5.0v v ds = 0.5v v ds d v gs s i ds(on)
ald1123e/ALD1121E advanced linear devices 8 typical performance characteristics offset voltage vs. ambient temperature ambient temperature ( c) -50 -25 0 25 50 125 100 75 4 3 2 1 0 -1 -2 -3 -4 offset voltage (mv) representative units gate source voltage vs. on - resistance 5.0 4.0 3.0 2.0 1.0 0.1 1 100 10 1000 10000 +25 c gate source voltage (v) on - resistance (k ) +125 c v ds i ds(on) d v gs s 0.0v v ds 5.0v drain - gate diode connected voltage tempco vs. drain source on current 5 drain- gate diode connected voltage tempco (mv/ c ) drain source on current ( a) 1 10 100 1000 -55 c t a +125 c 0 -5 -2.5 2.5 gate leakage current vs. ambient temperature gate leakage current (pa) -50 -25 0 25 50 125 100 75 500 400 300 200 600 100 0 ambient temperature ( c) i gss
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